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| MICROWAVE CORPORATION v01.0300 HMC266 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 20 - 40 GHz Typical Applications The HMC266 is ideal for: * 23, 26, & 38 GHz Point to Point Radios * LMDS * SATCOM Features Input IP3: Up to +17 dBm Sub-Harmonically Pumped (x2) LO Small Size: 1.32mm x 1.47mm Functional Diagram General Description The HMC266 chip is a broadband GaAs MMIC sub-harmonically pumped (x2) balanced passive mixer which can be used as an upconverter or downconverter in a small overall chip area of 1.9 mm2. The 2LO to RF isolation is excellent eliminating the need for additional filtering. All data is with the chip in a 50 ohm test fixture connected via 0.076 mm (3 mil) ribbon bonds of minimal length <0.31 mm (<12 mils). These devices are much smaller and more reliable than hybrid diode mixer designs. 5 MIXERS - CHIP Electrical Specifications, TA = +25 C, LO Drive = +12 dBm IF = 1 GHz Parameter Min. Frequency Range, RF Frequency Range, LO Frequency Range, IF Conversion Loss Noise Figure (SSB) 2LO to RF Isolation LO to RF Isolation 2LO to IF Isolation RF to IF Isolation LO to IF Isolation IP3 (Input) 1 dB Compression (Input) 42 20 50 16 48 10 0 Typ. 20 - 40 10 - 20 1-3 12 12 52 24 60 22 55 13 +4 16 16 Max. GHz GHz GHz dB dB dB dB dB dB dB dBm dBm Units 5 - 64 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v01.0300 HMC266 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 20 - 40 GHz Conversion Gain vs. Temperature @ LO = +12 dBm 0 Isolation @ LO = +12 dBm 0 -10 LO/RF RF/IF CONVERSION GAIN (dB) ISOLATION (dB) -5 -55 C -10 +25 C -20 -30 -40 -50 -60 LO/IF 2LO/RF -15 +85 C -20 15 20 25 30 35 40 RF FREQUENCY (GHz) -70 -80 15 2LO/IF 20 25 30 35 40 RF FREQUENCY (GHz) 5 MIXERS - CHIP Conversion Gain vs. LO Drive 0 Return Loss @ LO = +12 dBm 0 LO CONVERSION GAIN (dB) +12dBm +16dBm -10 +14dBm +10dBm RETURN LOSS (dB) -5 -5 -10 -15 -15 RF +8dBm -20 15 20 25 30 35 40 RF FREQUENCY (GHz) -20 0 5 10 15 20 25 30 35 40 FREQUENCY (GHz) IF Bandwidth @ LO = +12 dBm 0 IF Return Loss -5 Upconverter Performance Conversion Gain @ LO = +12 dBm 0 CONVERSION GAIN (dB) CONVERSION GAIN (dB) 3 4 -5 -10 Conversion Gain -10 -15 -15 -20 0 1 2 RF FREQUENCY (GHz) -20 15 20 25 30 35 40 RF FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 5 - 65 MICROWAVE CORPORATION v01.0300 HMC266 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 20 - 40 GHz Input IP3 vs. LO Drive 20 +16dBm Input IP3 vs. Temperature @ LO = +12 dBm 20 INPUT IP3 (dBm) +14dBm 10 +12dBm INPUT IP3 (dBm) 15 15 +85C 10 +25C -55C 5 5 5 MIXERS - CHIP 0 20 25 30 RF FREQUENCY (GHz) 35 40 0 20 25 30 RF FREQUENCY (GHz) 35 40 Input IP2 vs. LO Drive 100 Input IP2 vs. Temperature @ LO = +12 dBm 100 INPUT IP2 (dBm) INPUT IP2 (dBm) 95 +16dBm 95 +85C +25C 90 90 85 +12dBm +14dBm 80 20 25 30 RF FREQUENCY (GHz) 35 40 85 -55C 80 20 25 30 RF FREQUENCY (GHz) 35 40 MxN Spurious Outputs as a Down Converter nLO mRF -3 -2 -1 0 1 2 3 63 69 79 67 50 29 70 1 23 x 66 19 63 6 5 4 3 2 1 0 P1dB vs. Temperature @ LO = +12 dBm 10 9 8 INPUT P1dB (dBm) +85C 7 +25C 6 5 4 3 2 1 0 20 25 -55C RF = 27 GHz @ -10 dBm LO = 13 GHz @ +12 dBm drive level All values in dBc below IF power level 30 RF FREQUENCY (GHz) 35 40 5 - 66 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v01.0300 MICROWAVE CORPORATION HMC266 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 20 - 40 GHz Absolute Maximum Ratings RF / IF Input LO Drive Storage Temperature Operating Temperature +13 dBm +23 dBm -65 to +150 C -55 to +85 C 5 MIXERS - CHIP 5 - 67 Outline Drawing (See Handling Mounting Bonding) NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004" SQUARE. 3. BOND PAD SPACING CENTER TO CENTER IS .006". 4. BACKSIDE METALLIZATION: GOLD. 5. BOND PAD METALLIZATION: GOLD. 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v01.0300 HMC266 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 20 - 40 GHz MMIC Assembly Techniques Ribbon Bond Ribbon Bond 5 MIXERS - CHIP Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils). Gold ribbon of 0.076 mm x 0.013 mm (3 mil x 0.5 mil) of minimal length <0.31 mm (<12 mils) is recommended to minimize inductance on the RF ports. 5 - 68 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v01.0300 HMC266 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 20 - 40 GHz GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz Handling Precautions Follow these precautions to avoid permanent damage. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature of 265 C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 C. DO NOT expose the chip to a temperature greater than 320 C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule. 5 MIXERS - CHIP 5 - 69 Wire Bonding Ribbon bond with 0.076 mm x 0.013 mm (3 mil x 0.5 mil) size recommended. Thermosonic wirebonding with a nominal stage temperature of 150 C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ulrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com |
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